Selective area heteroepitaxy of low dislocation density antiphase boundary free GaAs microridges on flat-bottom (001) Si for integrated silicon photonics

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)

The role of interfacial contamination on antiphase domain boundary (APB) formation in GaAs grown epitaxially on Si(100) by metal-organic chemical vapor deposition was investigated. The pre-growth cleaning of the Si substrate was varied to affect the relative amount of residual surface contamination across the wafer. APB density in the as-grown GaAs film was examined with the aid of a selective ...

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation ...

Selective-Area Growth of Heavily n–Doped GaAs Nanostubs on Si(001) by Molecular Beam Epitaxy

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si„001..

We report controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide formation by utilizing the chalcogenide semiconductor gallium sesquiselenide Ga2Se3 as a nonreactive buffer layer. Initial nucleation of both pure and Co-doped anatase TiO2 is along Ga2Se3 nanowire structures, coalescing to a flat, multidomain film within two molecular layers. Arsenic-...